In recent years, with the continuous growth of sales in the new energy vehicle market, SiC silicon carbide module has gradually become the first choice for major manufacturers to accelerate new energy innovation because it is suitable for high-frequency and high-power-density working scenarios. In order to assist manufacturers to improve the design of silicon carbide module better, EXSENSE Electronics Technology Co., Ltd. has launched DR series bonding gate resistor to help the module unlock high-efficiency performance.

Compared with traditional silicon-based materials, silicon carbide module can withstand higher operating temperature and higher voltage, and the addition of bonding gate resistor can bring significant performance improvements to the module. The details are as follows:

First, increase switching speed

Through the electrical connection between the bonding gate resistor and the SiC chip inside the silicon carbide module, the inductance of the gate drive loop can be effectively reduced and the switching speed of the silicon carbide module can be improved. The increase of switching speed helps to reduce energy loss during power conversion process and improve the overall efficiency of the equipment.

Second, improve power density

Setting gate resistor in the design scheme of the silicon carbide module and optimizing the connection with other components, more power devices can be efficiently deployed in a limited space, which can greatly improve the utilization rate of the substrate. This helps to meet the increasing demand for miniaturization and densification in power module design and promote its sustainable development.

Third, reduce losses

Addition of a bonding gate resistor, the switching speed can be significantly improved while the source inductance effect is eliminated. This combined effect greatly reduces the loss of silicon carbide module, which not only helps to improve the overall stability of the equipment, but also helps to extend the service life of the module.

Bonding gate resistor for SiC silicon carbide module developed and mass-produced by EXSENSE Electronics has the characteristics of low temperature coefficient of electric resistance (TCR), which is conducive to promoting the development of high energy efficiency of silicon carbide module. Moreover, the gate resistor has two structures: horizontal conduction and vertical conduction, customers can choose according to the different installation requirements of SiC silicon carbide modules. At the same time, due to the functional area of the bonding gate resistor is protected inside the resistor, its reliability also has certain advantages.