As one of the important components of the electronic power system, silicon carbide SiC module plays an indispensable role in new energy vehicles, renewable resources, energy storage, industry and other fields, and its core role is to efficiently convert and control electric energy. In order to maintain superior performance and stable operation of SiC modules, it is necessary to maximize efficiency with help of the bonding gate resistors developed and produced by EXSENSE Electronics Technology Co., Ltd..

SiC module is usually composed of bonding gate resistors, SiC chips, substrates, conductive regions, signal regions, heat dissipation modules, etc. Among them, the gate resistor is electrically connected to the SiC chip by means of bonding wires. During the operation of the SiC chip, the gate resistor equalizes the current, thus protecting the chip from excessive current and ensuring that it operates within the normal operating range. In addition, the bonding gate resistor synergizes with other components of the SiC module:

First, conductive region: The close cooperation between the gate resistor and the conductive region ensures the stability of the current and voltage during the operation of the SiC chip, and promotes the SiC module to maintain an efficient and stable switching frequency.

Second, signal region: while providing the installation position for the gate resistor, the working process of the SiC chip is controlled through accurate layout design, which ensures the effective and stable operation of the module.

Third, heat dissipation module: The SiC module will generate heat during the working process, and the assembly position of the bonding gate resistor can be reasonably arranged to assist the heat dissipation module to disperse the heat of the SiC chip and reduce the effect of local heating, so as to improve the heat dissipation efficiency of the module.

On the one hand, the reason why the bonding gate resistor of EXSENSE Electronics can become a crucial bridge between the SiC module and its internal components is that it can share the current to prevent overload when the SiC chip is connected in parallel, protect the SiC module and help to extend its service life. On the other hand, the gate resistor is compactly assembled with other components when the module layout is optimized, which improves the utilization rate of the module substrate and promotes the development of SiC module in the direction of miniaturization. Why does the bonding gate resistor stand out from the crowd and become a key component in the SiC module? This is because:

First, small temperature coefficient of resistance (TCR) , the excellent stability is conducive to the SiC module to improve its reliability;

Second, great weatherability, which can adapt to different extreme application scenarios, help module maintains excellent electrical performance;

Third, two encapsulated methods (horizontal conduction, vertical region), customers can choose the appropriate bonding gate resistor according to the design scheme of SiC module.