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Development History of IGBT
2020/10/27 03:10:26

EXSENSE Electronics Technology Co., Ltd. has been focused on research and development of NTC thermistor chip for IGBT since 2007, we use advance semiconductor process and combine with independent intellectual property rights, to ensure the high precision, high reliability and high sensitivity of thermistor chip.

IGBT combines the advantages of Bipolar Junction Transistor (BJT) and Metal-Oxide Semiconductor Field Effect Transistors (MOSFET), which has the advantages of low break-over voltage, high on-state current, low loss of BJT, and has the advantages of fast switching speed, high input impedance, low control power, simple drive circuit and small switching loss of MOSFET. Therefore, IGBT can not be compared with other power semiconductor devices in terms of high voltage, large current and high speed. It is a relatively ideal switching device in the field of power electronics, and it is also the main direction of future application and development.

From the 1980s to the present, IGBT chips have undergone the fifth and the sixth generation of product upgrades, from the PT type to the FS-Trench type, all aspects of the indicators have been constantly optimized. The chip has reduced to a quarter of its original size, the width of process wire has reduced from 5 microns to 0.5 microns, through-state saturation voltage drop has reduced from 3 volts to 1 volt, shutdown time has also become faster, from 0.5 microseconds to 0.15 microseconds, power loss has been also lower, the broken voltage has also increased from 600V to more than 6500V.

According to the data of China Industry Information Network, the top five IGBT manufacturers of the world have a combined market share of 74%, at the same time, from the conventional IGBT market of 400V and high-end IGBT market of more than 4500V, the market dominance of IGBT products from overseas manufacturers is very obvious. From the low, medium and high voltage IGBT market, most manufacturers are providing 600 to 1300V medium voltage range IGBT discrete and module solutions, only a few manufacturers are specialized in low voltage discrete IGBT market.

Industry chain of IGBT can be divided into four parts: chip design, chip manufacturing, module design and manufacturing closure testing. Among them, chip design, module design and process design have very high technical barriers, which require a truly professional R&D team and a long time of technical accumulation. In recent years, IGBT industry in China has developed rapidly under the promotion of national policies and market traction, and the industrial chain has been gradually improved. In view of the current competitive situation of IGBT enterprises in China, the manufacturing and testing module links are highly competitive. Wafer OEM manufacturing enterprises dominated by three major semiconductor manufacturers have already possessed the technology to produce 8~12 inch IGBT chips and actively promoted the upgrading of domestic manufacturing terminals. But the chip design is relatively weak, and only a few companies can compete. Compared with Integrated circuit, power semiconductor also has two business models, Integrated Device Manufacturer (IDM) and Fab-less.

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