In recent years, the rise of the new energy vehicle industry has led to the continuous development of high-efficiency silicon carbide modules, and how to maintain excellent power density and switching loss of modules has gradually become a research hot spot in the field of new energy. In the silicon carbide module, the source inductance has an impact on the switching speed and loss, so it is necessary to work with other components through the bonding gate resistor to effectively eliminate the source inductance effect of the silicon carbide module.

In the design of the silicon carbide module, the bonding gate resistor will be integrated into the silicon carbide module, and combined with other components, the switching loss of the module will be reduced, and the current transmission capacity and power density of the module will be improved. Specifically:

First, eliminate the source inductance effect

Source inductance can cause voltage overshoot and current oscillation during switching process, which can affect the efficiency and stability of silicon carbide modules. The gate resistor is used for the layout and installation of the module, and it is electrically connected to the silicon carbide chip and the gate control area through the bonding process, which can eliminate the source inductance effect.

Second, improve the current transmission capacity and power density of silicon carbide modules

The layout of the bonding gate resistor and other components enables the silicon carbide module to make full use of the substrate space and improve the substrate utilization rate. This layout not only reduces the area of the conductive area of the gate drive loop, but also provides space for the placement of more silicon carbide chips, thereby improving the current transfer capacity and power density of the module.

In general, as one of the key components of silicon carbide modules, the bonding gate resistor independently developed and produced by EXSENSE Electronics Technology Co., Ltd. can significantly promote the efficient operation of silicon carbide modules. It can withstand long-term high-temperature soldering, so that it can adapt to a variety of high-temperature and harsh application scenarios. Its high accuracy helps the module to maintain the accuracy of its work. In addition, the bonding gate resistor has two encapsulated methods: horizontal conduction and vertical conduction, which provides customers with different options in the design and installation of silicon carbide modules.