IGBT is a composite fully controlled voltage driven power semiconductor device, which is composed of BJT (Bipolar Junction Transistor) and MOS (Metal Oxide Semiconductor). In order to monitor the working temperature of IGBT in real time and prevent its failure due to abnormal temperature, it is usually necessary to install MELF glass-encapsulated NTC thermistor as a temperature control component.

In semiconductor power supply applications, short circuit of low inductance may often occur with high current, and this short circuit condition may be caused by drive interference, semiconductor failure, or load short circuit. Semiconducting switches, such as IGBT, IGFET (Insulated Gate Field Effect Transistor), MOSFET (Metal-oxide-semiconductor Field Effect Transistor), which can actively limit the short-circuit current to protect the whole program and peripheral devices from damage. Due to the high electrical losses in the semiconductor caused by the total voltage applied, it is necessary to quickly turn off the switch in short-circuit mode to avoid damage to the semiconductor switch. Therefore, it is necessary to have an IGBT that can improve short circuit and stability, and MELF glass-encapsulated NTC thermistor should be inserted to monitor its working temperature in real time.

IGBT, which improves short circuit and stability, comprises a transmitter end on the first surface of semiconductor, a collector end on the second surface of semiconductor, and the first region of the first conductivity type is located in semiconductor between the first surface and the second surface. The injection structure of collector is connected to the second surface and it is the second conductive type, including the first part and the second part of the first transverse distance between each other. It is worth noting that a MELF glass-encapsulated NTC thermistor adjacent to the first zone is inserted in the area between the first and second parts of the IGBT to monitor the operating temperature of the IGBT in real time.

MELF glass-encapsulated NTC thermistor developed and produced by EXSENSE Electronics Technology Co., Ltd., due to its wide temperature range, high accuracy and it’s suitable for leadless encapsulating, which plays the role of temperature monitoring and temperature control in IGBT.