With the rapid development of the field of electric vehicle, the performance of SiC silicon carbide module, as the core component of power electronic system, is directly related to the efficiency, reliability and cost of the system. In order to facilitate the efficient and safe operation of the SiC module, the bonding gate resistor is installed in it to equalize the current and prevent damage to the module caused by abnormal current.

The bonding gate resistor not only affects the switching speed of the silicon carbide module, but also the energy loss and the thermal management of the module during the switching process. Therefore, the proper positioning of the gate resistor is essential to improve the efficiency of the entire SiC module. The bonding gate resistor is generally installed in the conductive region of the module, and is electrically connected to the chip through the bonding process to achieve parallel connection to meet the current control requirements of the module. Incorporating gate resistors into circuit design helps SiC modules to:

First, reduce switching loss: Combined with other components inside the module, reduce the source inductance in the gate drive circuit, which helps to reduce the loss generated in the switching process and prolong the service life of the module;

Second, improve the switching speed: the reasonable circuit layout is carried out by using the bonding gate resistor, which helps the module to improve the overall power output capacity;

Third, enhance power density: The gate resistor brings higher substrate utilization space to the module, which is conducive to the miniaturization design of the module.

Based on the above-mentioned role of bonding gate resistor in silicon carbide module, EXSENSE Electronics Technology Co., Ltd. has specially developed and mass-produced DR series bonding gate resistor for silicon carbide module manufacturer to help improve the performance of silicon carbide module. In order to cater to the different installation scenarios of customers, EXSENSE Electronics divides the bonding gate resistor into vertical conduction and horizontal conduction, which provides convenience for customers in the selection of models. In addition, gate resistor offers the following advantages:

First, high accuracy, assist the silicon carbide module to carry out more accurate current transmission work;

Second, withstand long-term high-temperature soldering to help the module still operate stably in high-temperature environment;

Third, can be bonded and silver sintered, customers can choose the appropriate method according to their own needs.

Bonding gate resistor complements other components inside the SiC module, which not only effectively improves the module's current transmission capacity, balances switching losses and conduction losses, but also enhances its ability to cope with complex working conditions. With the continuous progress of silicon carbide technology, EXSENSE Electronics will continue to improve the design of the bonding gate resistor in the future, and pay more attention to the collaborative optimization of its overall architecture with the silicon carbide module to meet the needs of the module for higher efficiency and smaller size.