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Bonding Gate Resistor to Promote Energy Conversion Innovation of SiC Silicon Carbide Module
2024/11/27 03:11:39


In recent years, the rapid development of new energy vehicles and renewable energy has also driven the demand for silicon carbide modules. As the core of facilitating the energy conversion, the performance of silicon carbide modules affects the efficiency of the entire system. Therefore, EXSENSE Electronics Technology Co., Ltd. has developed and mass-produced a special bonding gate resistor for silicon carbide modules to promote its performance optimization.

In the SiC module, the bonding gate resistor does not exist in isolation, but works closely with other components to assist the high-performance operation of the module:

First, collaboration with silicon carbide chips

Silicon carbide chip is a key component of the silicon carbide module, bonding gate resistor is electrically connected to it to achieve the effect of equalizing the current. This helps to keep the current in the normal range during the switching process of the module, improving its operating stability.

Second, collaboration with the Kelvin District
The combination of the gate resistor and the Kelvin District in the silicon carbide chip can effectively eliminate the source inductance effect, increase the switching speed of the silicon carbide module, and reduce the switching loss.

In addition to the above-mentioned components, the gate resistor is also highly integrated with other components inside the silicon carbide module through the bonding process, so as to improve the utilization rate of the substrate and provide a guarantee for the power density and current transmission efficiency of the module. Compared with other resistors for silicon carbide, EXSENSE Electronics' bonding gate resistors have the following advantages:

First, low temperature coefficient of resistance, which makes the gate resistor have higher stability and reliability;

Second, the working temperature is high, gate resistor can withstand up to 200℃;

Third, horizontal conduction and vertical conduction two encapsulating methods, which can meet different installation needs.

Bonding gate resistor works with multiple components in the silicon carbide module to achieve high-efficiency operation of the power module by optimizing the switching characteristics, eliminating the source inductance effect, and improving the substrate utilization, promote the module's energy conversion innovation.

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