SiC silicon carbide module, with its own characteristics such as low conduction loss and high-frequency switching, has become core component in fields like new energy vehicle, smart grid, etc. However, the nanosecond-level switching speed of the silicon carbide module is easy to cause problems such as overvoltage, overcurrent and electromagnetic interference (EMI), so it is necessary to control the current with the bonding gate resistor independently developed by EXSENSE Electronics to protect the silicon carbide module from damage.

In the SiC module, the bonding gate resistor does not function in isolation, but works closely with other components inside the module to ensure efficient and stable operation:

1. Cooperates with Kelvin source circuit to eliminate the source inductance effect

Silicon carbide module often uses a Kelvin source circuit to separate the power circuit from the drive circuit. The gate resistor is electrically connected to the Kelvin source circuit, and the integrated layout further reduces the conductive region of the drive circuit. This structure effectively reduces parasitic inductance, thereby reducing voltage spikes during switching process, which is particularly suitable for high-frequency applications.

2. Cooperates with silicon carbide chip to balance the current

Through the bonding process, the bonding gate resistor is connected in parallel with the silicon carbide chip to optimize the current sharing effect of the module. This design reduces the risk of thermal runaway and improves the performance of silicon carbide module.

3. Highly integrated with other components to improve module layout

In order to support the R&D of silicon carbide manufacturers, the bonding gate resistors produced by EXSENSE Electronics provide two structures: vertical conduction and horizontal conduction. Small size is conducive to the manufacture of miniaturized structures and makes the design of silicon carbide module more compact.

With the cooperation of the bonding gate resistor, the silicon carbide module can maintain excellent reliability and stability in the face of complex working conditions. The synergy between the bonding gate resistor and other components inside the module further ensures the stable operation and high performance of the silicon carbide module.