The IGBT thermistor chip produced by EXSENSE Electronics Technology Co., Ltd. plays a role of temperature control and temperature monitoring in IGBT module, which can effectively help IGBT module operate safely and steadily in electric automobile.

Due to the long-term dependence on foreign imports of IGBT modules and chips in the Chinese market, since 2005, a large number of overseas IGBT talents have returned to China to invest in the development of domestic IGBT modules and chip industry, and a certain scale of IGBT industry chain system has been formed at present. There are three main business models for the IGBT industry now:

First, Fabless mode refers to a company that is only responsible for circuit design and sales of chip and outsourcing specific production links.

Second, Encapsulated mode refers to the business mode of purchasing chip independent encapsulating.

Third, IDM (Integrated Device Manufacture) mode refers to a company integrating chip design, manufacturing, sealing and testing.

Due to the continuous development of electric automobile, IGBT, as a key component, has been in short supply. In the face of strong market demand, IGBT manufacturers increased investment and financing and production layout. In terms of technology, under the background that battery capacity has become the bottleneck problem of electronic automobile, improving charging power and efficiency and saving energy consumption during driving are effective ways to improve the battery endurance of electric automobile. Therefore, conventional automotive silicon-based power devices have the possibility of being replaced by the third generation semiconductor power devices.

SiC is the representative of the third generation semiconductor materials. Due to the high voltage resistance, low loss, high efficiency and other characteristics of SiC, power devices can break through the silicon limitations, bringing better electrical conductivity and power performance. These improvements are in line with the needs of automotive electronics, industrial automation and new energy sources. So most of manufacturers have piled on SiC. The global SiC industry pattern presents a three-way position in the United States, Europe and Japan, among which the United States is the world's largest. U.S. companies produce 70% to 80% of the world's SiC. Europe has a complete industrial chain of SiC substrates, epitaxy, devices and applications.

Although SiC is a long-term trend, SiC MOSFET is difficult to replace IGBT module in the short term. SiC has inconsistency in material stress in the production of epitaxy, resulting in the stress of the wafer interface exceeding the tensile limit when the wafer size is enlarged, resulting in lattice damage and reduced product yield. Therefore, at present, the yield rate of SiC chips is low, and the wafer size mainstream is still maintained at 4 or 6 inches, so the cost advantage of large-size wafers cannot be achieved and the production cost is too high. Cost of equivalent SiC MOSFET is 8 to 12 times higher than Si IGBT, and the overall cost of SiC solutions for automotive applications is approximately $300 higher than traditional Si IGBT. High price is the main factor restricting the development of SiC devices, while the main determinants of cost are substrate and wafer size. In the future, with the development of technology, the cost of substrates will gradually fall, the size of wafers will become larger and the price will gradually fall.